2SJ449 데이터 시트보기 (PDF) - NEC => Renesas Technology
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2SJ449 Datasheet PDF : 8 Pages
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2SJ449
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Drain to Source On-Resistance
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
RDS(on)
VGS(off)
| yfs |
IDSS
IGSS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
MIN.
–4.0
2.0
TYP.
0.55
–4.8
3.5
1040
360
70
24
16
47
14
23.1
7.1
12.9
0.92
155
930
MAX.
0.8
–5.5
–100
m100
UNIT
Ω
V
S
µA
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CONDITIONS
VGS = –10 V, ID = –3.0 A
VDS = –10 V, ID = –1 mA
VDS = –10 V, ID = –3.0 A
VDS = –250 V, VGS = 0
VGS = m30 V, VDS = 0
VDS = –10 V
VGS = 0
f = 1 MHz
ID = –3.0 A
VGS(on) = –10 V
VDD = –125 V
RG = 10 Ω, RL = 42 Ω
ID = –6.0 A
VDD = –200 V
VGS = –10 V
IF = –6.0 A, VGS = 0
IF = –6.0 A, VGS = 0
di/dt = 50 A/µs
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
D.U.T.
RG = 25 Ω
L
PG
50 Ω
VDD
VGS = –20 → 0 V
ID
VDD
IAS BVDSS
VDS
Test Circuit 3 Gate Charge
D.U.T.
IG = –2 mA
PG.
50 Ω
Starting Tch
RL
VDD
D.U.T.
RG
PG.
RG = 10 Ω
VGS
0
t
t = 1µs
Duty Cycle ≤ 1 %
RL VGS VGS
Wave 010 %
VGS (on)
Form
VDD
ID
90 %
ID
Wave
Form
10 %
0
td (on)
ID
t t r
d (off)
90 %
90 %
10 %
tf
ton
toff
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
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