2SJ449 데이터 시트보기 (PDF) - NEC => Renesas Technology
부품명
상세내역
제조사
2SJ449 Datasheet PDF : 8 Pages
| |||
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
2.0
1.5
1.0
VGS = –10 V
0.5
0
ID = –3 A
–50
0
50 100 150
Tch - Channel Temperature - ˚C
10 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
Ciss
1 000
Coss
100
10
–1.0
Crss
–10
–100
VDS - Drain to Source Voltage - V
–1 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
di/dt = 50 A/µs
VGS = 0
100
10
1.0
0.1
1.0
10
100
ID - Drain Current - A
2SJ449
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
VGS = 0 V
10 V
1
0.1
0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
1 000
SWITCHING CHARACTERISTICS
tr
100
10
tf
td(on)
td(off)
1.0
–0.1
–1.0
VDD = –125 V
VGS = –10 V
RG = 10 Ω
–10
–100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-400
–20
ID = –6 A
-300
VDD = –200 V
–15
–125 V
–50 V
-200
–10
-100
–5
0
0
10
20
30
40
Qg - Gate Charge - nC
5
Share Link: 