RMBA19500-58(1999) 데이터 시트보기 (PDF) - Raytheon Company
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RMBA19500-58 Datasheet PDF : 7 Pages
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Raytheon
Raytheon Commercial Electronics
RMBA19500-58
PCS/DCS1800 2 Watt Linear GaAs MMIC Power Amplifier
Description
Features
Maximum
Ratings
Electrical
Characteristics *
(*50 Ohm System,
VD = 7V, T = 25¡C)
The RMBA19500 is a high power, highly linear Power Amplifier. The
circuit uses RaytheonÕs pHEMT process. It has been designed for use as
a driver stage for PCS/DCS1800 base stations, or as the output stage for
Micro- and Pico-Cell base stations. The amplifier has been optimized for
high linearity requirements for CDMA operation. The device is matched for
50 ohms input impedance. The bias currents of the amplifier can be
adjusted to obtain optimum power, linearity and efficiency characteristics
for DCS, NADC, PHS and CDMA systems.
n 2 Watt Linear output power at 38 dBc ACPR1 for CDMA operation
n Small Signal Gain of 30 dB
n Small outline SMD package
Rating
Drain Supply Voltage Note 1
Gate Supply Voltage
RF Input Power (from 50 Ω source)
Operating Case Temperature Range
Storage Temperature Range
Parameter
Min
Frequency Range
1805
1930
Gain (small signal)
Over 1805-1880 MHz
Over 1930-1990 MHz
Gain variation:
Over frequency range
Over temperature range
Noise Figure
Linear output power:
for CDMA (Note 2)
33
Saturated output power (Note 3)
OIP3 (Note 4)
PAE (CDMA modulation @2W note 2)
Input VSWR (50 Ω)
Drain Voltage (VD)
Gate Voltages
Quiescent current (IDQ1,2, IDQ3) (Note 5)
Thermal Resistance
(Channel to Case) Rjc
Symbol
VD
VG
PRF
TC
TS
Typ
Value
+10
-5
+5
-30 to +85
-40 to +100
Max
1880
1990
Unit
Volts
Volts
dBm
¡C
¡C
Unit
MHz
MHz
30
dB
30
dB
+/-1
dB
+/- 1.5
dB
6
dB
38
43
20
2:1
7
(Note 3)
180,445
dBm
dBm
dBm
%
Volts
Volts
mA
11
¡C/W
Notes:
1. Only under quiescent conditions - no RF applied
2. 9 Channel Forward Link QPSK Source; 1.23 Mbps modulation rate. ACPR1 measured at 885 KHz offset at a value ≥ 38 dBc.
CDMA Waveform measured using the ratio of the average power within the 1.23 MHz channel and within a 30 kHz bandwidth
at an 885 MHz offset.
3. Single tone at Bandcenter.
4. Two tones: 1.25 MHz apart at Bandcenter: bias optimized.
5. Quiescent currents can be adjusted to optimize the linearity of the amplifier for differing operation. Default biasing is opt imized
for CDMA (Ref Note 2). Gate voltages are to be adjusted to achieve these quiescent currents.
This is advanced information which contains data on products in development. Characteristic
performance data and specifications are subject to change without notice.
Tel: 978-470-9421
FAX: 978-470-9201
www.raytheon.com/micro
Revised October 22, 1999
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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