RMBA19500-58(1999) 데이터 시트보기 (PDF) - Raytheon Company

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RMBA19500-58
(Rev.:1999)

PCS/DCS1800 2 Watt Linear GaAs MMIC Power Amplifier

Raytheon Company 

Raytheon

Raytheon Commercial Electronics

RMBA19500-58

PCS/DCS1800 2 Watt Linear GaAs MMIC Power Amplifier

Application Information

CAUTION: THIS IS AN ESD SENSITIVE DEVICE.

The following describes a procedure for evaluating the RMBA19500-58, a monolithic high efficiency

power amplifier, in a surface mount package, designed for use as a driver stage for PCS/DCS1800 Base

station or as the final output stage for Micro- and Pico-Cell base stations. Figure 1 shows the package

outline and the pin designations. Figure 2 shows the functional block diagram of the packaged product.

It should be noted that RMBA19500-58 requires external passive components for DC bias and RF output

matching circuits. A recommended schematic circuit is shown in Figure 3. The gate biases for the three

stages of the amplifier may be set by simple resistive voltage dividers. Figure 4 shows a typical layout of

an evaluation board, corresponding to the schematic circuits of figure 3. The following designations

should be noted:

(1) Pin designations are as shown in figure 2.

(2) Vg1, Vg2 and Vg3 are the Gate Voltages (negative) applied at the pins of the package

(3) Vgg12and Vgg3 are the negative supply voltages at the evaluation board terminals (Vg1and Vg2

are tied together)

(4) Vd1, Vd2 and Vd3 are the Drain Voltages (positive) applied at the pins of the package

(5) Vdd is the positive supply voltage at the evaluation board terminal (Vd1, Vd2 and Vd3 are tied

together)

Note: The base of the package must be soldered on to a heat sink for proper operation.

Test Procedure for the evaluation board (RMBA19500-58-TB)

CAUTION: LOSS OF GATE VOLTAGES (VG1, VG2, VG3) WHILE CORRESPONDING DRAIN

VOLTAGES (Vdd) ARE PRESENT CAN DAMAGE THE AMPLIFIER.

The following sequence must be followed to properly test the amplifier. (It is necessary to add a fan to

provide air cooling across the heat sink of RMBA19500.)

Step 1: Turn off RF input power.

Step 2: Use GND terminal of the evaluation board for the ground of the DC supplies. Set Vgg12 and

Vgg3 to -3V (pinch-off)..

Step 3:

Step 4:

Step 5:

Slowly apply drain supply voltages of +7 V to the board terminal Vdd ensuring that there is no

short.

Adjust Vgg12 down from -3V until the drain current (with no RF applied) increases to Idq12 as

per supplied result sheet. Then adjust Vgg3 until the total drain current becomes equal to the

sum of Idq12 and Idq3.

After the bias condition is established, RF input signal may now be applied at the appropriate

frequency band and appropriate power level.

Step 6: Follow turn-off sequence of:

(i) Turn off RF Input Power (ii) Turn down and off drain voltage Vdd.

(iii) Turn down and off gate voltages Vgg12 and Vgg3.

This is advanced information which contains data on products in development. Characteristic

performance data and specifications are subject to change without notice.

Tel: 978-470-9421

FAX: 978-470-9201

www.raytheon.com/micro

Revised October 22, 1999

Page 3

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

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