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RMBA19500-58

PCS 2 Watt Linear GaAs MMIC Power Amplifier

Raytheon Company 

RMBA19500-58 - PCS 2 Watt Linear GaAs

RF Components MMIC Power Amplifier

PRODUCT INFORMATION

Description

The RMBA19500 is a highly linear Power Amplifier. The circuit uses Raytheon RF Components’

pHEMT process. It has been designed for use as a driver stage for PCS base stations, or as the output

stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high linearity

requirements for CDMA operation.

Features

! 2 Watt Linear output power at 36 dBc ACPR1 for CDMA

operation

! Small Signal Gain of >28 dB

! Small outline SMD package

Electrical

Characteristics2

Parameter

Min Typ

Frequency Range

1930

Gain (small signal)

Over 1930-1990 MHz

30

Gain variation:

Over frequency range

+/-1

Over temperature range

+/- 1.5

Noise Figure

6

Linear output power:

for CDMA 3

33

Max Unit

1990 MHz

dB

dB

dB

dB

dBm

Parameter

Min Typ Max Unit

OIP3 4

PAE@33 dBm Pout

42.5

dBm

24

%

Input VSWR (50 Ω)

2:1

Drain Voltage (Vdd)

7.0

Volts

Gate Voltage

(VG1,2 and VG3)5

-2

-0.25 Volts

Quiescent currents

(IDQ1,2, IDQ3) 5

Thermal Resistance

180, 445

mA

(Channel to Case) Rjc

11

°C/W

Absolute

Ratings

Parameter

Symbol

Drain Supply Voltage 1

VD

Gate Supply Voltage

VG

RF Input Power (from 50 Ω source)

PRF

Operating Case Temperature Range TC

Storage Temperature Range

TS

Value

+10

-5

+5

-30 to +85

-40 to +100

Units

Volts

Volts

dBm

°C

°C

Notes:

1. Only under quiescent conditions – no RF applied.

2. VDD = 7.0V, Tc = 25°C. Part mounted on evaluation board with input and output matching to 50 Ohms.

3. 9 Channel Forward Link QPSK Source; 1.23 Mbps modulation rate. CDMA ACPR1 is measured using the ratio of the

average power within the 1.23 MHz channel at band center to the average power within a 30 KHz bandwidth at an 885

KHz offset. Minimum CDMA output power is met with ACPR1 > 36 dBc.

4. OIP3 specifications are achieved for power output levels of 27 and 30 dBm per tone with tone spacing of 1.25 MHz at

band-center with adjusted supply and bias conditions of Vdd=6.5V and IdqTotal=625mA (see Note 5).

5. VG1,2 and VG3 must be individually adjusted to achieve IDQ1,2 and IDQ3. A single VGG bias supply adjusted to achieve

IDQTOTAL=625mA can be used with nearly equivalent performance. Values for IDQ1,2 and IDQ3 shown have been

optimized for CDMA operation. IDQ1,2 and IDQ3 (or IDQTOTAL) can be adjusted to optimize the linearity of the amplifier

for other modulation systems.

The device requires external input and output matching to 50 Ohms as shown in Figure 3 and the

Parts List.

www.raytheonrf.com

Specifications are based on most current or latest revision.

Revised June 27, 2003

Page 1

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

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