RF2157 데이터 시트보기 (PDF) - RF Micro Devices

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RF2157

PCS CDMA/TDMA 3V POWER AMPLIFIER

RF Micro Devices 

RF2157

Application Schematic

Korea - CDMA

RF IN

Matching network for

optimum input return loss

Bypassing for

VREG1 and VREG2

C5

15 pF

C24

4.7 pF

Interstage tuning for centering

frequency response

2

RF Choke - Bias inductor

for the amplifier interstage

TL4

VREG

R12

Jumper

C27

15 pF

1 16 15 14 13

C30

11 pF

C8

10 nF

Bypassing for VCC

R11

Jumper

R1

1 kΩ

2

VMODE

3

12

L2

8.2 nH

11

C13

15 pF

4

10

56789

C6

15 pF

VCC

Bias return

L4

15 nH

Matching network for

optimum load impedance

Board

CDMA (Korea)

Pins 1 and 9 are internally grounded to the die flag.

C30 (pF) C1 (pF)

10

4.7

L1 (nH) C14 (pF)

12

2.2

C1

TL1

4.7 pF

L1

12 nH

TL2

C7

1.5 pF

C14

2.2 pF

C3

15 pF

RF OUT

C4

15 pF

C28

10 nF

* L1 is a High Q inductor (i.e., Coilcraft 0805HQ-series).

**C1 and C14 are High Q capacitors (i.e., Johanson C-series).

Transmission

Line Length

CDMA (Korea)

TL1

30-40 mils

TL2

150 mils

TL3

20-30 mils

TL4

200 mils

Rev A19 010611

2-191

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