RMPA1902A-58 데이터 시트보기 (PDF) - Raytheon Company
부품명
상세내역
제조사
RMPA1902A-58 Datasheet PDF : 5 Pages
| |||
RMPA1902A-58
PCS GaAs MMIC Power Amplifier
Description
PRODUCT INFORMATION
The RMPA1902-58 is a monolithic high efficiency power amplifier for PCS CDMA personal communication system
applications. The MMIC requires off-chip matching. The amplifier circuit design is a single ended configuration that
utilizes harmonic tuning for increased power added efficiency and linearity. The device uses Raytheon’s
Pseudomorphic High Electron Mobility Transistor (pHEMT) process.
Features
K Positive supply voltage of 3.5 V, nominal
K Efficiency of 36%, typical, for CDMA average power out of 29 dBm
K Small outline quad package
Absolute
Maximum
Ratings4
Electrical
Characteristics1
Parameter
Positive DC Voltage
Negative DC Voltage
Simultaneous (Vd-Vg)
RF Input Power (from 50-Ohm source)
Operating Case Temperature
Storage Temperature Range
Thermal Resistance (Channel to case)
Symbol
Vd1,Vd2, Vd3
Vg1,Vg2, Vg3
Vdg
PIN
TC
TStg
Rjc
Value
+9
-6
+12
+10
-30 to +90
-35 to +110
+18
Unit
Volts
Volts
Volts
dBm
°C
°C
°C/W
Parameter
Min Typ
Max Unit
Parameter
Min Typ
Frequency Range
1850
1910 MHz Power Out
29
Gain (Small Signal)
Gain Variation vs Temp
Noise Power
(1930-1990 MHz)
(All Power Levels)
30
-0.02
dB
Efficiency at
dB/°C
Pout = 29 dBm
36
ACPR
(Offset ≤ ± 1.25 MHz)3
49
-137 dBm/Hz Noise Figure (over temp.)
Input VSWR (50Ω)
Stability (All spurious)2
2.0:1 ---
Quiescent Current
-70 dBc
Vdd
3.5
Harmonics
(Po ≤ 29 dBm)
2fo, 3fo, 4fo
Vgg (<4 mA)4
-2.0
Case Operating Temp -40
-40
dBc
Max Unit
dBm
%
dBc
5.5 dB
135 mA
Volts
-0.3 Volts
+85 °C
www.raytheon.com/micro
Notes:
1. Specifications are valid for Vdd = 3.5V, load = 50 Ω, and Tc = 25°C as measured in Raytheon’s test fixture unless otherwise stated.
2. Source/Load VSWR ≤ 3:1 (All Angles, -50 dBm<Po<29 dBm) or Load VSWR ³20:1 (Out of Band, All Angles, Tc=-30 to +90°C).
3. Po ≤ 29.0 dBm at Vdd=3.5V; CDMA Waveform measured using the ratio of the average power within the 1.23 MHz channel and within a 30
kHz bandwidth at a 1.25 MHz offset.
4. Vgg adjusted for quiescent current. Idq1,2=50+/-1 mA, Idq3=85+/-2 mA
Characteristic performance data and specifications are subject to change without notice.
Revised April 7, 2000
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Share Link: 