IL400 데이터 시트보기 (PDF) - Infineon Technologies
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IL400 Datasheet PDF : 1 Pages
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IL400
Photo SCR Optocoupler
FEATURES
• Turn On Current (IFT), 5.0 mA Typical
• Gate Trigger Current (IGT), 20 µA
• Surge Anode Current, 1.0 Amp
• Blocking Voltage, 400 V
• Gate Trigger Voltage (VGT), 0.6 Volt
• Isolation Voltage, 5300 VRMS
• Solid State Reliability
• Standard DIP Package
• Underwriters Lab File #E52744
•
V
DE
VDE Approval #0884
Available with Option 1
DESCRIPTION
The IL400 is an optically coupled SCR with a Gal-
lium Arsenide infrared emitter and a silicon photo
SCR sensor. Switching can be achieved while main-
taining a high degree of isolation between triggering
and load circuits. The IL400 can be used in SCR
triac and solid state relay applications where high
blocking voltages and low input current sensitivity
are required.
Maximum Ratings
Emitter
Peak Reverse Voltage ....................................... 6.0 V
Peak Forward Current
(100 µs, 1% Duty Cycle) ................................ 1.0 A
Continuous Forward Current ........................... 60 mA
Power Dissipation at 25°C............................ 100 mW
Derate Linearly from 25°C ........................ 1.3 mW/°C
Detector
Reverse Gate Voltage........................................ 6.0 V
Anode Voltage (DC or AC Peak) ...................... 400 V
Anode Current ............................................... 100 mA
Surge Anode Current (10 ms duration) ............. 1.0 A
Surge Gate Current (5.0 ms duration) ........... 200 mA
Power Dissipation, 25°C ambient................. 200 mW
Derate Linearly from 25°C ...................... 2.11 mW/°C
Package
Isolation Voltage .......................................5300 VRMS
Isolation Resistance
VIO=500 V, TA=25°C.............................min. 1012 Ω
VIO=500 V, TA=100°C...........................min. 1011 Ω
Total Package Dissipation ............................ 250 mW
Derate Linearly from 25°C ...................... 2.63 mW/°C
Operating Temperature .................. –55°C to +100°C
Storage Temperature...................... –55°C to +150°C
Dimensions in Inches (mm)
321
pin one ID
.248 (6.30)
.256 (6.50)
Anode 1
4 56
Cathode 2
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
.335 (8.50)
.343 (8.70)
NC 3
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
.031 (0.80) min. 3°–9°
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
6 Gate
5 Anode
4 Cathode
.300 (7.62)
typ.
18°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.114 (2.90)
.130 (3.0)
Characteristics TA=25°C
Symbol Min.
Emitter
Forward Voltage
Reverse Voltage
Reverse Current
Detector
Forward Blocking
Voltage
VF
—
VR
5.0
IR
—
VDRM 400
Reverse Blocking
Voltage
VDRRM 400
On-state Voltage
Vt
—
Holding Current
IH
—
Gate Trigger
Voltage
VGT
—
Forward Leakage
Current
ID
—
Reverse Leakage IR
—
Current
Gate Trigger
Current
IGT
—
Package
Turn-0n Current
IFT
0.5
Isolation
Capacitance
—
—
Typ. Max. Unit
1.2 1.5 V
——V
— 10 µA
——V
——V
— 1.2 V
— 500 µA
0.6 1.0 V
0.2 2.0 µA
0.2 2.0 µA
20 50 µA
5.0 10.0 mA
— 2 pF
Condition
IF=20 mA
IR=10 µA
VR=5.0 V
RGK=10 KΩ
TA=100°C
Id=150 µA
RGK=10 KΩ
TA=100°C
Id=150 µA
IT=100 mA
RGK=27 KΩ
VFX=50 V
VFX=100 V
RGK=27 KΩ
RL=10 KΩ
RGK=27 KΩ
VRX=400 V
IF=0, TA=25°C
RGK=27 KΩ
VRX=400 V
IF=0, TA=25°C
VFX=100 V
RGK=27 KΩ,
RL=10 KΩ
VFX=100 V
RGK=27 KΩ
f=1.0 MHz
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–141
February 24, 2000-21
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