PC814X 데이터 시트보기 (PDF) - Sharp Electronics
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PC814X Datasheet PDF : 16 Pages
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PC900V0NSZX Series
■ Design Considerations
● Notes about static electricity
Transistor of detector side in bipolar configuration may be damaged by static electricity due to its minute de-
sign.
When handling these devices, general countermeasure against static electricity should be taken to avoid
breakdown of devices or degradation of characteristics.
● Design guide
In order to stabilize power supply line, we should certainly recommend to connect a by-pass capacitor of
0.01µF or more between VCC and GND near the device.
The detector which is used in this device, has parasitic diode between each pins and GND.
There are cases that miss operation or destruction possibly may be occurred if electric potential of any pin
becomes below GND level even for instant.
Therefore it shall be recommended to design the circuit that electric potential of any pin does not become
below GND level.
This product is not designed against irradiation and incorporates non-coherent IRED.
● Degradation
In general, the emission of the IRED used in photocouplers will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5years)
into the design consideration.
Please decide the input current which become 2times of MAX. IFHL.
Sheet No.: D2-A05301EN
9
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