MOC8111 데이터 시트보기 (PDF) - Infineon Technologies
부품명
상세내역
제조사
MOC8111 Datasheet PDF : 2 Pages
| |||
MOC8111/MOC8112
No Base Connection
Phototransistor Optocoupler
FEATURES
• Current Transfer Ratio
MOC8111, 20% minimum
MOC8112, 50% minimum
• No Base Terminal Connection for Improved
Common Mode Interface Immunity
• Field-Effect Stable by TRIOS®
(TRansparent IOn Shield)
• Long Term Stability
• Industry Standard Dual-in-Line Package
• Underwriters Lab File #E52744
•
V
DE
VDE #0884 Available with Option 1
DESCRIPTION
The MOC8111, MOC8112 is an optocoupler consist-
ing of a Gallium Arsenide infrared emitting diode opti-
cally coupled to a silicon planar phototransistor
detector in a plastic plug-in DIP 6 pin package.
Dimensions in inches (mm)
3 2 1 pin one ID
.248 (6.30)
.256 (6.50)
Anode 1
Cathode 2
4 56
.335 (8.50)
.343 (8.70)
NC 3
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
3°–9°
6 NC
5 Collector
4 Emitter
.300 (7.62)
typ.
18°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
1. 14 (2.90)
.130 (3.0)
The coupling device is suitable for signal transmission
between two electrically separated circuits. The
potential difference between the circuits to be cou-
pled is not allowed to exceed the maximum permissi-
ble reference voltages.
In contrast to the IL1, the base terminal is not con-
nected, resulting in a substantially improved com-
mon-mode interference immunity.
Maximum Ratings (TA=25°C)
Emitter
Reverse Voltage ................................................. 6.0 V
DC Forward Current ......................................... 60 mA
Surge Forward Current (t≤10 µs)......................... 2.5 A
Total Power Dissipation .................................. 100 mW
Detector
Collector-Emitter Breakdown Voltage ................... 30 V
Collector Current .............................................. 50 mA
Collector Current (t≤1 ms) ............................... 150 mA
Total Power Dissipation .................................. 150 mW
Package
Isolation Test Voltage between Emitter and Detector,
Refer to Standard Climate 23/50
DIN 50014 ................................................ 5300 VRMS
Creepage ..................................................... ≥7.0 mm
Clearance ..................................................... ≥7.0 mm
Isolation Thickness between
Emitter and Detector .................................. ≥0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part 1...................... 175
Isolation Resistance
VIO=500 V, TA=25°C ........................................1012 Ω
VIO=500 V, TA=100°C ......................................1011 Ω
Storage Temperature Range ............ –55°C to +150°C
Ambient Temperature Range............ –55°C to +100°C
Soldering Temperature
(max. 10 s, dip soldering distance
to seating plane ≥1.5 mm) ............................... 260°C
Electrical Characteristics (TA=25°C)
Parameter
Sym. Min. Typ. Max. Unit
Emitter
Forward Voltage
VF
— 1.15 1.5 V
Reverse Leakage
IR
— 0.05 10 µA
Current
Capacitance
CJ
— 25 — pF
Detector
Collector-Emitter
Breakdown
Voltage
BVCEO 30 — — V
Collector-Emitter
Leakage Current
ICEO — 1.0 50 nA
Emitter-Collector
Breakdown
Voltage
VECO 7.0 — — V
Collector-Emitter
Capacitance
CCE — 7.0 — pF
Package
Collector Saturation VCESAT — 0.15 0.4 V
Voltage
Current Transfer
Ratio
MOC8111
MOC8112
CTR
——%
20
50
Turn On Time
tON
— 7.5 20 µs
Turn Off Time
tOFF — 5.7 20 µs
Condition
IF=10 mA
VR=6.0 V
V=0 V,
f=1.0 MHz
IC=1.0 µA
VCE=10 V
IE=10 µA
VCE=0 V,
f=1.0 MHz
IC=500 µA
IF=10 mA
IF=10 mA
VCE=10 V
VCC=10 V
RL=100 Ω,
IC=2.0 mA,
see Figure 1
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–215
March 7, 2000-21
Share Link: 