Figure 5. Diode forward voltage (typ.) Figure 8. Output characteristics
TA=25°C, VF=f(IF)
(typ.) TA=25°C, ICE=f(VCE, IF)
Figure 11. Transistor capacitance
(typ.) TA=25°C, f=1 MHz, CCE=f(VCE)
CCB=f (VCB), CEB=f (VEB)
Figure 6. Diode forward voltage (typ.)
IF =1 mA, VF=f(TA)
Figure 9. Permissible forward current
diode IF=f(TA)
Figure 12. Collector-emitter leakage
current IF=0, VCE=10 V, ICEO=f(TA)
Figure 7. Output characteristics (typ.)
TA=25°C, ICE=f(VCE, IB)
Figure 10. Permissible power dissi-
pation PTOT=f(TA)
SFH608
5–3