MJE803(2002) 데이터 시트보기 (PDF) - ON Semiconductor
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MJE803 Datasheet PDF : 8 Pages
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ON Semiconductor)
Plastic Darlington
Complementary Silicon Power
Transistors
. . . designed for general–purpose amplifier and low–speed
switching applications.
• High DC Current Gain —
hFE = 2000 (Typ) @ IC
= 2.0 Adc
• Monolithic Construction with Built–in Base–Emitter Resistors to
Limit Leakage
Multiplication
• Choice of Packages —
MJE700 and MJE800 series
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
Symbol
VCEO
VCB
VEB
IC
IB
MJE700
MJE800
60
MJE702
MJE703
MJE802
MJE803
80
60
80
5.0
4.0
0.1
CASE 77
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25_C
PD
40
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25_C
0.32
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case
RθJC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CASE 77
3.13
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TO–220
2.50
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
PNP
MJE700
MJE702
MJE703
NPN
MJE800
MJE802
MJE803
4.0 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
40 WATT
50 WATT
321
STYLE 1:
PIN 1.
2.
3.
EMITTER
COLLECTOR
BASE
CASE 77–08
TO–225AA TYPE
MJE700–703
MJE800–803
© Semiconductor Components Industries, LLC, 2002
1
April, 2002 – Rev. 7
Publication Order Number:
MJE700/D
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