2SA1766 데이터 시트보기 (PDF) - SANYO -> Panasonic

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2SA1766

High hFE, Low-Frequency General-Purpose Amplifier Applications

SANYO -> Panasonic 

Ordering number:EN3182B

PNP Epitaxial Planar Silicon Transistor

2SA1766

High hFE, Low-Frequency

General-Purpose Amplifier Applications

Features

· Adoption of FBET, MBIT processes.

· High DC current gain (hFE=500 to 1200).

· Large current capacity.

· Low collector-to-emitter saturation voltage.

· High VEBO.

Package Dimensions

unit:mm

2038

[2SA1766]

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Symbol

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Base Current

Collector Dissipation

Junction Temperature

Storage Temperature

VCBO

VCEO

VEBO

IC

ICP

IB

PC

Tj

Tstg

Electrical Characteristics at Ta = 25˚C

Conditions

Mounted on ceramic board (250mm2×0.8mm)

Parameter

Symbol

Conditions

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

ICBO

IEBO

hFE1

hFE2

fT

Cob

VCE(sat)

VBE(sat)

VCB=–20V, IE=0

VEB=–10V, IC=0

VCE=–5V, IC=–10mA

VCE=–5V, IC=–200mA

VCE=–10V, IC=–10mA

VCB=–10V, f=1MHz

IC=–200mA, IB=–4mA

IC=–200A, IB=–4mA

E : Emitter

C : Collector

B : Base

SANYO : PCP

(Bottom view)

Ratings

Unit

–30 V

–25 V

–15 V

–300 mA

–500 mA

–60 mA

1.3 W

150 ˚C

–55 to +150 ˚C

Ratings

min typ

500 800

200

100

12

–0.12

–0.77

max

–0.1

–0.1

1200

–0.50

–1.10

Unit

µA

µA

MHz

pF

V

V

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

83098HA (KT)/1200MO/6279MO, TS No.3182-1/3

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