BF821 데이터 시트보기 (PDF) - Philips Electronics
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BF821 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP high-voltage transistors
Product specification
BF821; BF823
FEATURES
• Low current (max. 50 mA)
• High voltage (max. 300 V).
APPLICATIONS
• Telephony and professional communication equipment.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BF820, BF822.
MARKING
TYPE NUMBER
BF821
BF823
MARKING CODE(1)
1W∗
1Y∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
handbook, halfpage
3
3
1
1
Top view
2
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BF821
BF823
collector-emitter voltage
BF821
BF823
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
−
−300 V
−
−250 V
−
−300 V
−
−250 V
−
−5
V
−
−50 mA
−
−100 mA
−
−50 mA
−
250 mW
−65 +150 °C
−
150 °C
−65 +150 °C
1999 Apr 15
2
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