BF821 데이터 시트보기 (PDF) - Philips Electronics
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BF821 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP high-voltage transistors
Product specification
BF821; BF823
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
Cre
fT
emitter cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
CONDITIONS
IE = 0; VCB = −200 V
IE = 0; VCB = −200 V; Tj = 150 °C
IC = 0; VEB = −5 V
IC = −25 mA; VCE = −20 V
IC = −30 mA; IB = −5 mA
IC = ic = 0; VCB = −30 V; f = 1 MHz
IC = −10 mA; VCE = −10 V;
f = 100 MHz
MIN.
−
−
−
50
−
−
60
MAX. UNIT
−10 nA
−10 µA
−50 nA
−
−800 mV
1.6 pF
−
MHz
1999 Apr 15
3
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