FMBA56 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FMBA56 Datasheet PDF : 4 Pages
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Discrete POWER & Signal
Technologies
FMBA56
C2
E1
C1
B2
E2
pin #1 B1
SuperSOT™-6
Mark: .2G
PNP Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 300 mA. Sourced from Process 73.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCES
Collector-Emitter Voltage
80
VCBO
Collector-Base Voltage
80
VEBO
Emitter-Base Voltage
4.0
IC
Collector Current - Continuous
500
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
Max
FMBA56
700
5.6
180
Units
mW
mW/°C
°C/W
© 1998 Fairchild Semiconductor Corporation
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