FMBA56 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FMBA56 Datasheet PDF : 4 Pages
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PNP Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
IC = 1.0 mA, IB = 0
80
Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage IC = 100 µA, IE = 0
80
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100 µA, IC = 0
4.0
ICEO
Collector-Cutoff Current
VCE = 60 V, IB = 0
ICBO
Collector-Cutoff Current
VCB = 80 V, IE = 0
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 10 mA, VCE = 1.0 V
100
IC = 100 mA, VCE = 1.0 V
100
VCE(sat)
Collector-Emitter Saturation Voltage IC = 100 mA, IB = 10 mA
VBE(on)
Base-Emitter On Voltage
IC = 100 mA, VCE = 1.0 V
V
V
V
0.1 µA
0.1 µA
0.25 V
1.2
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
IC = 100 mA, VCE = 1.0 V,
f = 100 MHz
125
MHz
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
300
VCE = 1V
250
125 °C
200
150
25 °C
100
- 40 ºC
50
0.001
0.01
0.1
I C - COLLECTOR CURRENT (A)
Collector-Emitter Saturation
Voltage vs Collector Current
0.8
β = 10
0.6
0.4
0.2
0
10
- 40 ºC
25 °C
125 °C
100
I C - COLLECTOR CURRENT (mA)
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