BD330 데이터 시트보기 (PDF) - Philips Electronics
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BD330 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP power transistor
Product specification
BD330
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Rth j-mb
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
CONDITIONS
in free air
VALUE
100
7
UNIT
K/W
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
VCEsat
VBE
fT
collector cut-off current
IE = 0; VCB = −32 V
−
IE = 0; VCB = −32 V; Tj = 150 °C −
emitter cut-off current
IC = 0; VEB = −5 V
−
DC current gain
IC = −5 mA; VCE = −10 V
50
IC = −0.5 A; VCE = −1 V; see Fig.2 85
IC = −2 A; VCE = −1 V; see Fig.2 40
collector-emitter saturation voltage IC = −2 A; IB = −0.2 A
−
base-emitter voltage
IC = −5 mA; VCE = −10 V
−
IC = −2 A; VCE = −1 V
−
transition frequency
IC = −50 mA; VCE = −5 V;
−
f = 100 MHz
−
−
−
−
−
−
−
−600
−
100
−100
−10
−100
−
375
−
−0.5
−
−1.2
−
nA
µA
nA
V
mV
V
MHz
handbook4,0fu0ll pagewidth
hFE
300
MGD845
200
100
−010−1
VCE = −1 V.
−1
−10
−102
−103
−104
IC (mA)
Fig.2 DC current gain; typical values.
1999 Apr 26
3
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