EMZ7 데이터 시트보기 (PDF) - ROHM Semiconductor

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EMZ7

General purpose transistor (dual transistors)

ROHM Semiconductor 

EMZ7 / UMZ7N

 Electrical characteristics (Ta=25C)

Tr1 (NPN)

Parameter

Symbol Min.

Collector-base breakdown voltage

BVCBO 15

Collector-emitter breakdown voltage BVCEO 12

Emitter-base breakdown voltage

BVEBO

6

Collector cutoff current

ICBO

−

Emitter cutoff current

IEBO

−

Collector-emitter saturation voltage

VCE(sat)

−

DC current transfer ratio

hFE

270

Transition frequency

fT

−

Output capacitance

Cob

−

Typ.

−

−

−

−

−

90

−

320

7.5

Max.

−

−

−

0.1

0.1

250

680

−

−

Unit

V

V

V

μA

μA

mV

−

MHz

pF

Conditions

IC= 10μA

IC= 1mA

IE= 10μA

VCB= 15V

VEB= 6V

IC/IB= 200mA /10mA

VCE/IC= 2V/10mA

VCE= 2V, IC= −10mA, f= 100MHz

VCB= 10V, IE= 0A, f= 1MHz

Tr2 (PNP)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

Output capacitance

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(sat)

hFE

fT

Cob

Min.

−15

−12

−6

−

−

−

270

−

−

Typ.

−

−

−

−

−

−100

−

260

6.5

Max.

−

−

−

−0.1

−0.1

−250

680

−

−

Unit

V

V

V

μA

μA

mV

−

MHz

pF

Conditions

IC= −10μA

IC= −1mA

IE= −10μA

VCB= −15V

VEB= −6V

IC/IB= −200mA/−10mA

VCE/IC= −2V/−10mA

VCE= −2V, IC= 10mA, f= 100MHz

VCB= −10V, IE= 0A, f= 1MHz

Packaging specifications

Packaging type

Part No.

Code

Basic ordering unit (pieces)

UMZ7N

EMZ7

Taping

TR

T2R

3000

−

8000

−

Data Sheet

www.rohm.com

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○c 2012 ROHM Co., Ltd. All rights reserved.

2012.06 - Rev.B

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