MJH6287G(2012) 데이터 시트보기 (PDF) - ON Semiconductor
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MJH6287G Datasheet PDF : 7 Pages
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MJH6284 (NPN), MJH6287 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 0.1 Adc, IB = 0)
Collector Cutoff Current (VCE = 50 Vdc, IB = 0)
Collector Cutoff Current
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 10 Adc, VCE = 3.0 Vdc)
(IC = 20 Adc, VCE = 3.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 10 Adc, IB = 40 mAdc)
(IC = 20 Adc, IB = 200 mAdc)
Base−Emitter On Voltage (IC = 10 Adc, VCE = 3.0 Vdc)
Base−Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc)
DYNAMIC CHARACTERISTICS
Current−Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJH6284
MJH6287
Small−Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Symbol
VCEO(sus)
ICEO
ICEX
IEBO
hFE
VCE(sat)
VBE(on)
VBE(sat)
fT
Cob
hfe
Resistive Load
Delay Time
Rise Time
Storage Time
VCC = 30 Vdc, IC = 10 Adc
IB1 = IB2 = 100 mA
Duty Cycle = 1.0%
Fall Time
1. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Symbol
td
tr
ts
tf
Min
Max
Unit
100
−
Vdc
−
1.0
mAdc
mAdc
−
0.5
−
5.0
−
2.0
mAdc
−
750
18,000
100
−
Vdc
−
2.0
−
3.0
−
2.8
Vdc
−
4.0
Vdc
4.0
−
MHz
pF
−
400
−
600
300
−
−
Typical
NPN
PNP
Unit
0.1
0.1
ms
0.3
0.3
1.0
1.0
3.5
2.0
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPES, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
VCC
- 30 V
RC SCOPE
TUT
V2
APPROX
+12 V
0
V1
APPROX
- 8.0 V
RB
51 D1
≈ 8.0 k ≈ 50
25 ms
+ 4.0 V
BASE
tr, tf, ≤ 10 ns
DUTY CYCLE = 1.0%
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit
NPN
MJH6284
COLLECTOR
PNP
MJH6287
COLLECTOR
BASE
EMITTER
EMITTER
Figure 3. Darlington Schematic
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