PNP12N10E 데이터 시트보기 (PDF) - Philips Electronics
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PNP12N10E Datasheet PDF : 7 Pages
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Philips Semiconductors
PowerMOS transistor
Product Specification
PHP12N10E
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope. The device is
intended for use in Switched Mode
Power Supplies (SMPS), motor
control, welding, DC/DC and AC/DC
converters, and in general purpose
switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state resistance
MAX.
100
14
75
175
0.16
UNIT
V
A
W
˚C
Ω
PINNING - TO220AB
PIN
DESCRIPTION
1 gate
2 drain
3 source
tab drain
PIN CONFIGURATION
tab
1 23
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VDS
Drain-source voltage
-
-
VDGR
Drain-gate voltage
RGS = 20 kΩ
-
±VGS
Gate-source voltage
-
-
ID
Drain current (DC)
Tmb = 25 ˚C
-
ID
Drain current (DC)
Tmb = 100 ˚C
-
IDM
Drain current (pulse peak value) Tmb = 25 ˚C
-
Ptot
Total power dissipation
Tmb = 25 ˚C
-
Tstg
Storage temperature
-
- 55
Tj
Junction Temperature
-
-
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MAX.
100
100
30
14
10
56
75
175
175
UNIT
V
V
V
A
A
A
W
˚C
˚C
MIN.
-
-
TYP. MAX. UNIT
-
2 K/W
60
- K/W
September 1997
1
Rev 1.000
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