PNP12N10E 데이터 시트보기 (PDF) - Philips Electronics
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PNP12N10E Datasheet PDF : 7 Pages
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Philips Semiconductors
PowerMOS transistor
Product Specification
PHP12N10E
VGS / V
12
10
8
BUK453-100
VDS / V =20
80
6
4
2
0
0 2 4 6 8 10 12 14 16
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 14 A; parameter VDS
IF / A
30
BUK453-100A
20
10
Tj / C = 150
25
0
0
1
2
VSDS / V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 160 180
Tmb / C
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 14 A
VGS
0
RGS
L
VDS
T.U.T.
+ VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS/(BVDSS − VDD)
September 1997
5
Rev 1.000
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