TSDF1220(2000) 데이터 시트보기 (PDF) - Vishay Semiconductors
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TSDF1220 Datasheet PDF : 6 Pages
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TSDF1220/TSDF1220R/TSDF1220W/TSDF1220RW
Vishay Telefunken
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter Test Conditions
Symbol
Value
Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
m plated with 35 m Cu
RthJA
450
K/W
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
VCE = 12 V, VBE = 0
Collector-base cut-off current
VCB = 10 V, IE = 0
Emitter-base cut-off current
VEB = 1 V, IC = 0
Collector-emitter breakdown voltage IC = 1 mA, IB = 0
Collector-emitter saturation voltage IC = 30 mA, IB = 3 mA
DC forward current transfer ratio VCE = 5 V, IC = 20 mA
Symbol Min Typ Max Unit
ICES
100 mA
ICBO
IEBO
100 nA
2 mA
V(BR)CEO 6
V
VCEsat
0.1 0.5 V
hFE 50 100 150
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Transducer gain
Third order intercept point at
output
Test Conditions
VCE = 5 V, IC = 20 mA, f = 1 GHz
VCB = 1 V, f = 1 MHz
VCE = 1 V, f = 1 MHz
VEB = 0.5 V, f = 1 MHz
W VCE = 5 V, IC = 3 mA,
ZS = ZSopt, ZL = 50 , f = 2 GHz
W VCE = 5 V, IC = 20 mA,
ZS = ZSopt, ZL = 50 , f = 2 GHz
W VCE = 5 V, IC = 20 mA,
Z0 = 50 , f = 2 GHz
VCE = 5 V, IC = 20 mA, f = 2 GHz
Symbol Min Typ Max Unit
fT
12
GHz
Ccb
0.3
pF
Cce
0.35
pF
Ceb
0.5
pF
F
1.2
dB
Gpe
S21e2
IP3
14
12.5
22
dB
dB
dBm
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2 (6)
Document Number 85066
Rev. 6, 30-Jun-00
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