C490-UB290-E1000 데이터 시트보기 (PDF) - Cree, Inc
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C490-UB290-E1000 Datasheet PDF : 5 Pages
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Fig. 3
Topside View – UB290 and MB290
Bottom View
G•SiC® LED Chip
300 x 300 µm
Mesa (junction)
240 x 240 µm
Gold Bond Pad
120 µm Diameter
Die Cross Section
Anode (+)
h = 250 µm
Backside
Metallization
Cathode (-)
GaN/InGaN
SiC Substrate
Fig. 4
Topside View
Bottom View
G • SiC® LED Chip
300 x 300 µm
Top Area
200 x 200 µm
Gold Bond Pad
96 µm Diameter
Fig. 5
Topside View – Power Chip™
G-SiC LED Chip
900 x 900 µm
Bottom View
Width = 30 µm
Bond Pad
120 µm Diameter
Die Cross Section
Junction Area
248 x 248 µm
Cathode (-)
h = 250 µm
Backside
Metallization
220 x 220 µm
SiC Substrate
InGaN
Anode (+)
Junction Area
845 x 845 µm
Die Cross Section
Backside
Metallization
Anode (+)
Cathode (-)
SiC Substrate h = 250 µm
InGaN
CPR3AX Rev. D
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Tel: 919-313-5300 • Fax: 919-313-5451
www.cree.com
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