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M74HCT132M1R(1998) 데이터 시트보기 (PDF) - STMicroelectronics

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M74HCT132M1R
(Rev.:1998)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
M74HCT132M1R Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
74HCT132
DC SPECIFICATIONS
Symbol
Parameter
Vt+ High Level Threshold
Voltage
Vt- Low Level Threshold
Voltage
Vh Hysteresis Voltage
VOH High Level Output
Voltage
VOL Low Level Output
Voltage
II Input Leakage Current
ICC Quiescent Supply
Current
(*) All outputs loaded.
Test Conditions
VCC
(V)
4.5
5.5
4.5
5.5
4.5
5.5
4.5
VI(*) = IO=-50 µA
4.5
VIL or IO=-8 mA
VIH
4.5
VI(*) = IO=50 µA
4.5
VIH
IO=8 mA
5.5
VI = 5.5V or GND
5.5
VI = VCC or GND
Value
TA = 25 oC
Min. Typ . Max.
1.2 1.55 1.9
1.4 1.75 2.1
0.5 0.85 1.2
0.6 1.1 1.4
0.4 0.7 1.4
0.4 0.7 1.5
4.4 4.5
4.18 4.31
-40 to 85 oC
Min. Max.
1.2 1.9
1.4 2.1
0.5 1.2
0.6 1.4
0.4 1.4
0.4 1.5
4.4
4.13
0.0 0.1
0.17 0.26
±0.1
1
0.1
0.33
±1.0
10
Unit
V
V
V
V
V
µA
µA
AC ELECTRICAL CHARACTERISTICS (CL = 50pF, Input tr = tf =6 ns)
Symbol
Parameter
tTLH Output Transition Time
tTHL
tPLH Propagation Delay
tPHL Time
(*) Voltage range is 3.3V ± 0.3V
(**) Voltage range is 5V ± 0.5V
Test Condition
VCC
(V)
4.5
4.5
Value
TA = 25 oC
Min. Typ . Max.
7.0 15.0
-40 to 85 oC
Min. Max.
19.0
Unit
ns
20.0 33.0
41.0 ns
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
Test Conditions
Value
Unit
TA = 25 oC
-40 to 85 oC
Min. Typ . Max. Min. Max.
CIN Input Capacitance
3.5
pF
CPD Power Dissipation
Capacitance (note 1)
20
pF
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to
Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD VCC fIN + ICC/4 (per Gate)
3/7

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