RH1014M 데이터 시트보기 (PDF) - Linear Technology
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RH1014M Datasheet PDF : 8 Pages
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RH1014M
TABLE 1A: ELECTRICAL CHARACTERISTICS (Post-Irradiation) (Note 3)
VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted.
SYMBOL PARAMETER
VOS
Input Offset Voltage
IOS
Input Offset Current
IB
Input Bias Current
Input Voltage Range
CONDITIONS
CMRR
PSRR
AVOL
VOUT
SR
IS
Common-Mode Rejection VCM = 13V, – 15V
Ratio
Power Supply Rejection
Ratio
VS = ±10V to ±18V
Large-Signal Voltage Gain
Maximum Output Voltage
Swing
RL 10k, V O = ±10V
RL 10k
Output Low, No Load
Output Low, 600 to GND
Output Low, ISINK = 1mA
Output High, No Load
Output High, 600 to GND
Slew Rate
Supply Current
RL 10k
Per Amplifier
10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si)
NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
450
450
600
750
900 µV
2
600
600
750
900
µV
10
10
15
20
25
nA
2
10
10
15
20
nA
60
75
100
175
250 nA
2
80
100
125
200
nA
1 13.5
13.5
13.5
13.5
13.5
V
1 –15.0
–15.0
– 15.0
– 15.0
–15.0
V
2 3.5
3.5
3.5
3.5
V
20
0
0
0
V
97
97
94
90
86
dB
100
98
94
86
80
dB
500
±12.5
2
2
2
2 4.0
2 3.4
0.13
2
200
±12.5
25
10
0.6
4.0
3.2
0.12
0.55
0.50
100
±12.5
30
10
0.8
4.0
3.0
0.11
0.55
0.50
50
±12.5
40
10
1.0
4.0
2.8
0.07
0.55
0.50
25
±12.5
50
10
1.6
0.01
0.55
0.50
V/mV
V
mV
mV
V
V
V
V/µs
0.55 mA
mA
Note 1: Guaranteed by design, characterization, or correlation to other
tested parameters..
Note 2: Specification applies for VS+ = 5V, VS– = 0V, VCM = 0V,
VOUT = 1.4V.
3
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