L6565D 데이터 시트보기 (PDF) - STMicroelectronics
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L6565D Datasheet PDF : 17 Pages
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THERMAL DATA
Symbol
Parameter
Rth j-amb Max. Thermal Resistance, Junction-to-ambient
L6565
SO8
150
Minidip
100
Unit
°C/W
ABSOLUTE MAXIMUM RATINGS
Symbol
Pin
Parameter
IVcc
8
ICC + IZ
IGD
7 Output Totem Pole Peak Current (2 µs)
INV, COMP, 1, 2, 3 4 Analog Inputs & Outputs
VFF, CS
IZCD
5 Zero Current Detector
Ptot
Power Dissipation @Tamb = 50°C
Tj
Junction Temperature Operating range
Tstg
Storage Temperature
Value
Unit
30
mA
±700
mA
-0.3 to 7
V
50 (source)
mA
-10 (sink)
(Minidip)
1
W
(SO8)
0.65
-40 to 150
°C
-55 to 150
°C
ELECTRICAL CHARACTERISTCS
(Tj = -25 to 125°C, VCC = 12V, Co = 1nF; unless otherwise specified)
Symbol
Parameter
Test Condition
SUPPLY VOLTAGE
Vcc Operating range
After turn-on
VCCOn Turn-on threshold
VCCOff Turn-off threshold
Hys Hysteresis
VZ Zener Voltage
Icc = 25 mA
SUPPLY CURRENT
Istart-up Start-up Current
Before turn-on, VCC = 12V
Iq
Quiescent Current
After turn-on
ICC Operating Supply Current
@ 70 kHz
Iq
Quiescent Current
During Hiccup-mode OCP
Iq
Quiescent Current
VZCD < VDIS, VCC>VCCOff
LINE FEEDFORWARD
IVFF Input Bias Current
VVFF = 0 to 3 V
VVFF Operating Range
K Gain
VVFF = 1.5V, VCOMP = 4V
ERROR AMPLIFIER
VINV Voltage Feedback Input
Threshold
Tamb = 25°C
12V < VCC < 18V
Line Regulation
Vcc = 12 to 18V
IINV Input Bias Current
Min. Typ. Max. Unit
10.3
18
12.5 13.5 14.5
V
8.7
9.5 10.3
V
3.65
4
4.3
V
18
20
22
V
45
70
µA
2.3
3.5
mA
3.5
5
mA
1.6
3.5
mA
1.4
2.1
mA
-1
µA
0 to 3
V
0.16
2.465 2.5 2.535 V
2.44
2.56
2
5
mV
-0.1
-1
µA
3/17
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