IXSH25N120A 데이터 시트보기 (PDF) - IXYS CORPORATION
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IXSH25N120A Datasheet PDF : 2 Pages
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IXSH 25N120A
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
IC = IC90, VCE = 10 V,
Pulse test, t < 300 µs, duty cycle < 2 %
IC(on)
VGE= 15V, VCE = 10 V
Characteristic Values
Min. Typ. Max.
10 17
S
140
A
C
ies
Coes
Cres
Q
g
Qge
Q
gc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
E(on)
td(off)
tfi
E
off
RthJC
RthCK
V = 25 V, V = 0 V, f = 1 MHz
CE
GE
I = I , V = 15 V, V = 0.5 V
C
c90 GE
CE
CES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100µH
RG = 18 W, VCLAMP = 0.8 VCES
Note 1
Inductive load, TJ = 125°C
IC= IC90, VGE = 15 V, L = 100µH
RG = 18 W
V = 0.8 V
CLAMP
CES
Note 1
2850
pF
210
pF
50
pF
120
nC
30
nC
50
nC
100
ns
200
ns
450
ns
650
ns
9.6
mJ
100
ns
200
ns
1.8
mJ
450
ns
900
ns
17
mJ
0.63 K/W
0.25
K/W
Notes:
1) Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or Rg values.
2) Device must be heatsunk for high temperature measurements to avoid thermal runaway.
TO-247 AD (IXSH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F
5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J
1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L
4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
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