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HS-1115RH 데이터 시트보기 (PDF) - Intersil

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HS-1115RH Datasheet PDF : 4 Pages
1 2 3 4
Die Characteristics
DIE DIMENSIONS:
59 mils x 58.2 mils x 19 mils ±1 mil
1500μm x 1480μm x 483μm ±25.4μm
METALLIZATION:
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8kÅ ±0.4kÅ
Type: Metal 2: AICu(2%)
Thickness: Metal 2: 16kÅ ±0.8kÅ
Metallization Mask Layout
-IN
HS-1115RH
GLASSIVATION:
Type: Nitride
Thickness: 4kÅ ±0.5kÅ
WORST CASE CURRENT DENSITY:
< 2 x 105 A/cm2
TRANSISTOR COUNT: 89
SUBSTRATE POTENTIAL (Powered Up): Floating
HS-1115RH
VH
V+
OUT
+IN
V-
VL
V-
VL
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.
Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-
able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
FN4098.1
4

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