TS861(2012) 데이터 시트보기 (PDF) - STMicroelectronics

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TS861
(Rev.:2012)

Rail-to-rail micropower BiCMOS comparators

STMicroelectronics 

TS861, TS862, TS864

2

Electrical characteristics

Electrical characteristics

Table 3.

Symbol

Electrical characteristics at VCC = 2.7 V, Tamb = 25 °C

(unless otherwise specified)

Parameter

Min. Typ. Max. Unit

VIO

ΔVIO

IIO

IIB

VOH

VOL

AVD

CMR

SVR

ICC

TPLH

TPHL

Input offset voltage

TS861/2/4

Tmin < T < Tmax

TS861/2/4A

Tmin < T < Tmax

Input offset voltage drift

Input offset current(1)

Tmin < T < Tmax

Input bias current(1)

Tmin < T < Tmax

High level output voltage

ISOURCE = 2.5 mA

Tmin < T < Tmax

Low level output voltage

ISINK = 2.5 mA

Tmin < T < Tmax

Large signal voltage gain(2)

Common mode rejection ratio

0 < VICM < 2.7 V

Supply voltage rejection ratio

0 < VCC < 10 V

Supply current per comparator

No load, output low

No load, output high

Propagation delay from output low to output high

VICM = 1.35 V, f = 10 kHz, CL = 50 pF

Overdrive = 10 mV

Overdrive = 100 mV

Propagation delay from output high to output low

VICM = 1.35 V, f = 10 kHz, CL = 50 pF

Overdrive = 10 mV

Overdrive = 100 mV

3

15

18

mV

3

7

10

6

μV/°C

1 150

pA

300

1 300

pA

600

2.35 2.45

V

2.15

0.2 0.35

V

0.45

240

dB

dB

65

80

dB

6

12

μA

8

14

1.5

µs

0.6

1.5

µs

0.5

Doc ID 6422 Rev 3

3/19

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