TS861(2012) 데이터 시트보기 (PDF) - STMicroelectronics
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TS861 Datasheet PDF : 19 Pages
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Electrical characteristics
TS861, TS862, TS864
Note:
Table 5.
Electrical characteristics at VCC = +10 V, Tamb = 25 °C
(unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Unit
VIO
ΔVIO
IIO
IIB
VOH
VOL
AVD
CMR
SVR
ICC
Input offset voltage (VICM = VCC / 2)
TS861/2/4
Tmin < T < Tmax
Input offset voltage drift
Input offset current(1)
Tmin < T < Tmax
Input bias current(1)
Tmin < T < Tmax
High level output voltage
ISOURCE = 5 mA
Tmin < T < Tmax
Low level output voltage
ISINK = 5 mA
Tmin < T < Tmax
Large signal voltage gain(2)
Common mode rejection ratio
0 < VICM < 10 V
Supply voltage rejection ratio
2.7 < VCC < 10 V
Supply current per comparator
No load, output low
No load, output high
3
15
mV
18
6
μV/°C
1 150
pA
300
1 300
pA
600
9.6 9.8
V
9.45
0.2 0.4
V
0.55
240
dB
dB
75
dB
80
7
14
μA
10 16
TPLH
Propagation delay from output low to output high
VICM = 5 V, f = 10 kHz, CL = 50 pF
Overdrive = 10 mV
Overdrive = 100 mV
3
µs
0.5
TPHL
Propagation delay from output high to output low
VICM = 5 V, f = 10 kHz, CL = 50 pF
Overdrive = 10 mV
Overdrive = 100 mV
2.6
µs
0.4
Fall time
TF
f = 10 kHz, CL = 50 pF, overdrive = 100 mV
Rise time
TR
f = 10 kHz, CL = 50 pF, overdrive = 100 mV
20
ns
20
ns
1. Maximum values including unavoidable inaccuracies of the industrial test.
2. Design evaluation.
Limits are 100% production tested at 25 °C. Limits over temperature are guaranteed through
correlation and by design.
6/19
Doc ID 6422 Rev 3
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