TS861I 데이터 시트보기 (PDF) - STMicroelectronics
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TS861I Datasheet PDF : 15 Pages
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TS861-TS862-TS864
ELECTRICAL CHARACTERISTICS
VCC = +10V
Tamb = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ.
Input Offset Voltage (VICM = VCC / 2 )
Vio
TS861/2/4
3
Tmin<T<Tmax
∆Vio Input Offset Voltage Drift
6
Iio
Input Offset Current 1)
1
Tmin<T<Tmax
Iib
Input Bias Current 1)
1
Tmin<T<Tmax
High Level Output Voltage
VOH
Isource=5mA
Tmin<T<Tmax
9.6
9.8
9.45
Low Level Output Voltage
VOL
Isink=5mA
0.2
Tmin<T<Tmax
Avd Large Signal Voltage Gain 2)
240
CMR Common Mode Rejection Ratio
0 < VICM < 10V
75
SVR Supply Voltage Rejection Ratio
2.7 < Vcc < 10V
80
Supply current per comparator
ICC
no load, output low
7
no load, output high
10
Tplh Propagation delay from output low to output high
VICM=5V, f=10kHz, CL=50pF
overdrive = 10mV
3
overdrive = 100mV
0.5
Tphl Propagation delay from output high to output low
VICM=5V, f=10kHz, CL=50pF
overdrive = 10mV
2.6
overdrive = 100mV
0.4
Tf Fall time
f=10kHz, CL=50pF, overdrive=100mV
20
Tr Rise time
f=10kHz, CL=50pF, overdrive=100mV
20
1. Maximum values including unavoidable inaccurates of the industrial test.
2. Design evaluation
3. Limits are 100% production tested at 25°C. Limits over temperature are guaranteed through correlation and by design.
Max.
15
18
150
300
300
600
0.4
0.55
14
16
Unit
mV
µV/°C
pA
pA
V
V
dB
dB
dB
µA
µs
µs
ns
ns
5/15
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