IS42S16128 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS42S16128

128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM

Integrated Silicon Solution 

IS42S16128

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

VCC MAX

VccQ MAX

VIN

VOUT

PD MAX

ICS

TOPR

TSTG

Parameters

Maximum Supply Voltage

Maximum Supply Voltage for Output Buffer

Input Voltage

Output Voltage

Allowable Power Dissipation

Output Shorted Current

Operating Temperature

Storage Temperature

Rating

–1.0 to +4.6

–1.0 to +4.6

–1.0 to +5.5

–1.0 to +4.6

1

50

0 to +70

–55 to +150

Unit

V

V

V

V

W

mA

°C

°C

DC RECOMMENDED OPERATING CONDITIONS

At TA = 0 to +70°C(2)

Symbol

Parameter

Min.

Typ.

Max.

Unit

VCC, VCCQ

VIH

VIL

Supply Voltage

Input High Voltage

Input Low Voltage

3.0

3.3

3.6

V

2.0

—

5.5

V

–0.3

—

+0.8

V

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent

damage to the device. This is a stress rating only and functional operation of the device at these

or any other conditions above those indicated in the operational sections of this specification is

not implied. Exposure to absolute maximum rating conditions for extended periods may affect

reliability.

2. All voltages are referenced to GND.

3. VIH (max) = 5.5V for pulse width - 5 ns.

3. VIL (min) = –1.0V for pulse width - 5 ns.

ISSI ®

CAPACITANCE CHARACTERISTICS

At TA = 0 to +25°C, Vcc = VccQ = 3.3 ± 0.3V, f = 1 MHz(1,2)

Symbol

CIN1

CIN2

CI/O

Parameter

Input Capacitance: A0-A9

Input Capacitance: (CLK, CKE, CS, RAS, CAS, WE, LDQM, UDQM)

Data Input/Output Capacitance: I/O0-I/O15

Typ.

—

—

—

Max. Unit

5

pF

5

pF

7

pF

4

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

03/13/00

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