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IS42S16128-8T 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS42S16128-8T
ISSI
Integrated Silicon Solution ISSI
IS42S16128-8T Datasheet PDF : 75 Pages
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IS42S16128
ISSI ®
DC ELECTRICAL CHARACTERISTICS
(Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter
Test Condition
Speed Min. Max. Unit
IIL
Input Leakage Current
IOL
Output Leakage Current
VOH
Output High Voltage Level
VOL
Output Low Voltage Level
0V VIN VCC, with pins other than
the tested pin at 0V
Output is disabled
0V VOUT VCC
IOUT = 2 mA
IOUT = +2 mA
10 10 µA
10 10 µA
2.4
V
0.4
V
ICC1
Operating Current(1,2)
One Bank Operation, Burst Length=1
tRC tRC (min.), IOUT = 0mA
100 mA
ICC2P Precharge Standby Current
ICC2PS (In Power-Down Mode)
CKE VIL (MAX) tCK = tCK (MIN)
tCK = ×
3 mA
2 mA
ICC2N Precharge Standby Current
ICC2NS (In Non Power-Down Mode)
CKE VIH (MIN)
tCK = tCK (MIN)
tCK = ×
30 mA
15 mA
ICC3P Active Standby Current
ICC3PS (In Power-Down Mode)
CKE VIL (MAX)
tCK = tCK (MIN)
tCK = ×
3 mA
2 mA
ICC3N Active Standby Current
CKE VIH (MIN) tCK = tCK (MIN)
30 mA
ICC3NS (In Non Power-Down Mode)
tCK = ×
15 mA
ICC4
Operating Current
tCK = tCK (MIN)
CAS latency = 3
-8
160 mA
(In Burst Mode)(1)
IOUT = 0mA
-10 160 mA
-12 120 mA
CAS latency = 2
-8
120 mA
-10 120 mA
-12 110 mA
ICC5
Auto-Refresh Current
tRC = tRC (MIN)
-8
100 mA
-10 100 mA
-12
80 mA
ICC6
Self-Refresh Current
CKE 0.2V
2 mA
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time increases.
Also note that a bypass capacitor of at least 0.01 µF should be inserted between Vcc and GND for each memory chip to suppress
power supply voltage noise (voltage drops) due to these transient currents.
2. Icc1 and Icc4 depend on the output load. The maximum values for Icc1 and Icc4 are obtained with the output open state.
Integrated Silicon Solution, Inc. — 1-800-379-4774
5
Rev. A
03/13/00

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