MCM6341ZP11 데이터 시트보기 (PDF) - Motorola => Freescale
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MCM6341ZP11 Datasheet PDF : 10 Pages
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DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V ± 10%, TA = 0 to + 70°C, Unless Otherwise Noted)
(TA = – 40 to + 85°C for Industrial Temperature Offering)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Supply Voltage (Operating Voltage Range)
VDD
3.0
3.3
Input High Voltage
VIH
2.2
—
Input Low Voltage
VIL
– 0.5*
—
* VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 2.0 ns).
** VIH (max) = VDD + 0.3 V dc; VIH (max) = VDD + 2.0 V ac (pulse width ≤ 2.0 ns).
DC CHARACTERISTICS (See Note)
Parameter
Symbol
Min
Input Leakage Current (All Inputs, Vin = 0 to VDD)
Ilkg(I)
—
Output Leakage Current (E = VIH, Vout = 0 to VDD)
Ilkg(O)
—
Output Low Voltage (IOL = + 8.0 mA)
VOL
—
Output High Voltage (IOH = – 4.0 mA)
VOH
2.4
NOTE: E1, E2, and E3 are represented by E in this data sheet. E2 is of opposite polarity to E1 and E3.
Max
Unit
3.6
V
VDD + 0.3** V
0.8
V
Max
Unit
± 1.0
µA
± 1.0
µA
0.4
V
—
V
POWER SUPPLY CURRENTS (See Note)
Parameter
– 40 to
Symbol
0 to 70°C
+ 85°C
Unit
AC Active Supply Current
(Iout = 0 mA, VDD = max)
MCM6341–10
IDD
280
290
mA
MCM6341–11
275
285
MCM6341–12
270
280
MCM6341–15
260
270
AC Standby Current (VDD = max, E = VIH,
No other restrictions on other inputs)
MCM6341–10
ISB1
50
MCM6341–11
50
MCM6341–12
50
MCM6341–15
45
55
mA
55
55
50
CMOS Standby Current (E ≥ VDD – 0.2 V, Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V)
ISB2
20
(VDD = max, f = 0 MHz)
NOTE: E1, E2, and E3 are represented by E in this data sheet. E2 is of opposite polarity to E1 and E3.
20
mA
CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TA = 25°C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Typ
Input Capacitance
All Inputs Except Clocks and DQs
Cin
4
E, G, W
Cck
5
Input/Output Capacitance
DQ
CI/O
5
Max
Unit
6
pF
8
8
pF
MCM6341
4
MOTOROLA FAST SRAM
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