MRF15060 데이터 시트보기 (PDF) - Motorola => Freescale

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MRF15060

60 W, 1.49 GHz RF POWER BIPOLAR TRANSISTORS

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

The RF Sub–Micron Bipolar Line

RF Power Bipolar Transistors

Designed for broadband commercial and industrial applications at frequen-

cies from 1400 to 1600 MHz. The high gain and broadband performance of

these devices makes them ideal for large–signal, common–emitter class A and

class AB amplifier applications in 26 volt amplitude modulated and multi–carrier

base station equipment.

• Guaranteed Two–Tone Performance at 1490 MHz, 26 Volts

Output Power — 60 Watts (PEP)

Power Gain — 10 dB

Efficiency — 33%

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• S–Parameter Characterization at High Bias Levels

• Excellent Thermal Stability

• All Gold Metal for Ultra Reliability

• Capable of Handling 3:1 VSWR @ 26 Vdc, 1490 MHz, 60 Watts (PEP)

Output Power

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by MRF15060/D

MRF15060

MRF15060S

60 W, 1.49 GHz

RF POWER

BIPOLAR

TRANSISTORS

CASE 451–04, STYLE 1

(MRF15060)

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Emitter Voltage

Emitter–Base Voltage

Collector Current – Continuous

Total Device Dissipation @ TC = 70°C

Derate above 70°C

Storage Temperature Range

Operating Junction Temperature

THERMAL CHARACTERISTICS

Rating

Thermal Resistance, Junction to Case

CASE 451A–01, STYLE 1

(MF15060S)

Symbol

VCEO

VCES

VEBO

IC

PD

Tstg

TJ

Symbol

RθJC

Value

25

60

60

8

185

1.43

– 65 to +150

200

Max

0.7

Unit

Vdc

Vdc

Adc

Adc

Watts

W/°C

°C

°C

Unit

°C/W

©MMOotoTrOolaR, OIncL.A19R96F DEVICE DATA

MRF15060 MRF15060S

1

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