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TEA5101A 데이터 시트보기 (PDF) - STMicroelectronics

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TEA5101A
ST-Microelectronics
STMicroelectronics ST-Microelectronics
TEA5101A Datasheet PDF : 6 Pages
1 2 3 4 5 6
TEA5101A
ABSOLUTE MAXIMUM RATINGS
Symbol
VDD
VCC
IO
IO
IF
IF
Ij
Tj
Toper
Tstg
Parameter
Supply High Voltage
Supply Low Voltage
Output Current
to VDD
to Ground
Output Current
to VDD
to Ground
Input Current
Junction Temperature
Operating Ambient Temperature
Storage Temperature
THERMAL DATA
Symbol
Rth(j-c)
Rth(j-a)
Parameter
Maximum Junction Case Thermal Resistance
Typical Junction Ambient Thermal Resistance
Pin 5
Pin 2
Pins 7 - 10 - 13
Pins 9 - 12 - 15
Pins 1 - 3 - 4
Value
Unit
250
V
35
V
Protected
8
mA
45
mA
45
mA
60
mA
150
°C
0 to 70
°C
– 55 to + 150
°C
Max.
Typ.
Value
3
35
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Tamb = 25oC ; VCC = 12V ; VDD = 200V ; AV = 50 (unless otherwise specified)
Symbol
VDD
VCC
IDD
ICC
Vsath
RON
BW
TR - TF
GO
P
VREF
IIB
RI
Parameter
High Supply Voltage
Pin 5
Low Supply Voltage
Pin 2
High Voltage Supply Internal DC Current (Vout 100V)
(without the current due to the feedback network )
Pin 5
Low Voltage Supply DC Current
Pin 2
Output Saturation Voltage (High level)
IO = – 10 µA
Output Mos Transistor (Low level)
RON @ IO = 3 mA
Pins 7-10-13
Pins 7-10-13
Bandwidth (– 3db) (measured on CRT cathodes)
(CLOAD : 10pF – R Protect = 1k– Vout = 100V)
Vout : 50 VPP
Vout : 100 VPP
Rise Time and Fall Time : measured between 10% and 90% of output
pulse (CLOAD : 10 pF – R Protect = 1 k– Vout = 100 V)
Vout : 100 VPP
Open Loop Gain
Internal Power Dissipation (see calculation below)
Internal Voltage Reference
Pins 1-3-4
Internal Reference Voltage Difference Between 2 Channels
Voltage Reference Temperature Coefficient
Input Bias Current (Vout : 100 V)
Pins 1-3-4
Input Resistance
Min.
10
Typ.
200
12
8
Max.
220
15
12
Unit
V
V
mA
19 33 47 mA
3 10
V
1.7
k
10
MHz
8
MHz
50
ns
47 50
dB
3.5
W
3.55 3.8 4.05 V
5
%
–5
mV/°C
15
µA
14
k
3/6

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