AS2316N 데이터 시트보기 (PDF) - Astec Semiconductor => Silicon Link
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AS2316N Datasheet PDF : 10 Pages
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Secondary Side Housekeeping Circuit
AS23xx
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
VCC
20
V
Continuous Power Dissipation at 25° C
Junction Temperature
PD
1000
mW
TJ
150
°C
Storage Temperature Range
TSTG
– 65 to 150
°C
Lead Temperature, Soldering 10 Seconds
TL
300
°C
Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Recommended Conditions
Parameter
Supply Voltage
Symbol
VCC
Rating
5 - 12
Unit
V
Typical Thermal Resistance
Package
16L SOIC
16L PDIP
θJA
65° C/W
80° C/W
θJC Typical Derating
45° C/W 10.0 mW/°C
35° C/W 12.5 mW/°C
Electrical Characteristics
Electrical Characteristics are guaranteed over full junction temperature range (0 to 105° C). Ambient temperature must be derated
based on power dissipation and package thermal characteristics. Unless otherwise specified, the conditions of test are VCC = 12 V;
+3.3 V = 3.3 V; +5 V = 5V; +12 V = 12 V; –12 V = –12 V; – 5 V = – 5 V; OFF = low.
Parameter
Symbol
Bias
Supply Current
ICC
Min. VCC for operation
VCC Min.
Undervoltage, Overvoltage
+3.3 V (Not available on AS2350)
+3.3 V Undervoltage
UV
+3.3 V Overvoltage
OV
+3.3 V Input Current
IB
+5 V
+5 V Undervoltage
UV
+5 V Overvoltage
OV
+5 V Input Current
IB
+12 V
+12 V Undervoltage
UV
+12 V Overvoltage
OV
+12 V Input Current
IB
Test Condition
no faults
VREF = 2.5 V, no faults
V+3.3 =+3.3V, V+5 =+5.0V
V+5 =+5.0V, V+3.3 =+3.3V
V+12 =+12.0V
Min
Typ
Max
Unit
8
12
mA
4.2
V
2.87
2.95
3.03
V
3.76
3.86
3.96
V
-0.1
0
0.1
mA
4.40
4.50
4.60
V
5.74
5.89
6.04
V
1.6
2.5
mA
10.25
10.50 10.60
V
14.53
14.90 15.27
V
0.8
1.5
mA
ASTEC Semiconductor
95
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