MT28F128J3RG-15ETF 데이터 시트보기 (PDF) - Micron Technology
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MT28F128J3RG-15ETF Datasheet PDF : 52 Pages
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128Mb, 64Mb, 32Mb
Q-FLASH MEMORY
Table 3
Bus Operations
MODE
Read Array
Output Disable
Standby
Reset/Power-Down
Mode
Read Identifier Codes
Read Query
Read Status (ISM off)
Read Status (ISM on)
DQ7
DQ15–DQ8
DQ6–DQ0
Write
RP#
VIH
VIH
VIH
VIL
CE0, CE1,
CE21 OE#2 WE#2
Enabled VIL
VIH
Enabled VIH
VIH
Disabled X
X
X
X
X
ADDRESS
X
X
X
X
VPEN
X
X
X
X
DQ3
DOUT
STS DEFAULT
MODE NOTES
High-Z4
5, 6, 7
High-Z
X
High-Z
High-Z
X
High-Z4
VIH Enabled VIL
VIH
See
Figure 2
X Note 8
High-Z4
VIH Enabled VIL
VIH
See
Table 7
X Note 9
High-Z4
VIH Enabled VIL
VIH
X
X
DOUT
VIH Enabled VIL
VIH
X
X
DOUT
High-Z
High-Z
VIH Enabled VIH
VIL
X
VPENH
DIN
X
7, 10, 11
NOTE: 1. See Table 2 for valid CE configurations.
2. OE# and WE# should never be enabled simultaneously.
3. DQ refers to DQ0–DQ7 if BYTE# is LOW and DQ0–DQ15 if BYTE# is HIGH.
4. High-Z is VOH with an external pull-up resistor.
5. Refer to DC Characteristics. When VPEN ≤ VPENLK, memory contents can be read, but not altered.
6. X can be VIL or VIH for control and address pins, and VPENLK or VPENH for VPEN. See DC Characteristics for VPENLK and
VPENH voltages.
7. In default mode, STS is VOL when the ISM is executing internal block erase, program, or lock bit configuration
algorithms. It is VOH when the ISM is not busy, in block erase suspend mode (with programming inactive), program
suspend mode, or reset/power-down mode.
8. See Read Identifier Codes section for read identifier code data.
9. See Read Query Mode Command section for read query data.
10. Command writes involving block erase, program, or lock bit configuration are reliably executed when VPEN = VPENH and
VCC is within specification.
11. Refer to Table 4 for valid DIN during a WRITE operation.
128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_7.p65 – Rev. 6, Pub. 8/02
10
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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