2N6349 데이터 시트보기 (PDF) - ON Semiconductor

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2N6349

Triacs Silicon Bidirectional Thyristors

ON Semiconductor 

2N6344, 2N6349

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

*Thermal Resistance, Junction to Case

RθJC

2.2

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds

TL

260

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic

Symbol

Min

Typ

OFF CHARACTERISTICS

* Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open)

ON CHARACTERISTICS

TJ = 25°C

TJ = 100°C

IDRM,

IRRM

—

—

—

—

" p * Peak On–State Voltage

(ITM = 11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2%)

Gate Trigger Current (Continuous dc)

(VD = 12 Vdc, RL = 100 Ohms)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+)

*MT2(+), G(+); MT2(–), G(–) TC = –40°C

*MT2(+), G(–); MT2(–), G(+) TC = –40°C

Gate Trigger Voltage (Continuous dc)

(VD = 12 Vdc, RL = 100 Ohms)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+)

*MT2(+), G(+); MT2(–), G(–) TC = –40°C

*MT2(+), G(–); MT2(–), G(+) TC = –40°C

Gate Non–Trigger Voltage (Continuous dc)

(VD = Rated VDRM, RL = 10 k Ohms, TJ = 100°C)

*MT2(+), G(+); MT2(–), G(–); MT2(+), G(–); MT2(–), G(–)

VTM

IGT

VGT

VGD

—

1.3

—

12

—

12

—

20

—

35

—

—

—

—

—

0.9

—

0.9

—

1.1

—

1.4

—

—

—

—

0.2

—

* Holding Current

" (VD = 12 Vdc, Gate Open)

(Initiating Current = 200 mA)

IH

TC = 25°C

*TC = –40°C

* Turn-On Time

tgt

(VD = Rated VDRM, ITM = 11 A, IGT = 120 mA,

Rise Time = 0.1 µs, Pulse Width = 2 µs)

—

6.0

—

—

—

1.5

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Commutation Voltage

(VD = Rated VDRM, ITM = 11 A, Commutating di/dt = 4.0 A/ms,

Gate Unenergized, TC = 80°C)

*Indicates JEDEC Registered Data.

dv/dt(c)

—

5.0

Unit

°C/W

°C

Max

Unit

10

µA

2.0

mA

1.55

Volts

mA

50

75

50

75

100

125

Volts

2.0

2.5

2.0

2.5

2.5

3.0

Volts

—

mA

40

75

2.0

µs

—

V/µs

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