NTE128 데이터 시트보기 (PDF) - NTE Electronics
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NTE128 Datasheet PDF : 3 Pages
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Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
NTE128
NTE129
Collector–Base Breakdown Voltage
NTE128
NTE129
Emitter–Base Breakdown Voltage
NTE128
NTE129
Collector Cutoff Current
NTE128
NTE129
Emitter Cutoff Current
NTE128
NTE129
ON Characteristics (Note 2)
V(BR)CEO
IC = 30mA, IB = 0
IC = 10mA
V(BR)CBO
IC = 100µA, IE = 0
IC = 10µA
V(BR)EBO
IE = 100µA, IC = 0
IE = 10µA
ICBO
VCB = 90V, IE = 0
VCB = 90V, IE = 0, TA = +150°C
VCB = 60V
VCB = 60V, TA = +150°C
IEBO
VBE = 5V, IC = 0
VBE = 5V
80 – – V
80 – – V
140 – – V
80 – – V
7––V
5––V
–
– 0.01 µA
–
– 10 µA
– – 50 nA
–
– 50 µA
–
– 0.010 µA
–
– 10 µA
DC Current Gain
NTE128
NTE129
Collector–Emitter Saturation Voltage
NTE128
NTE129
Base–Emitter Saturation Voltage
NTE128
NTE129
hFE
IC = 0.1mA, VCE = 10V
50
IC = 10mA, VCE = 10V
90
IC = 150mA, VCE = 10V
100
IC = 150mA, VCE = 10V, TC = –55°C 40
IC = 500mA, VCE = 10V
50
IC = 1.0A, VCE = 10V
15
IC = 100µA, VCE = 5V
75
IC = 100mA, VCE = 5V
100
IC = 100mA, VCE = 5V, TC = –55°C 40
IC = 500mA, VCE = 5V
70
IC = 1.0A, VCE = 5V
25
VCE(sat)
IC = 150mA, IB = 15mA
–
IC = 500mA, IB = 50mA
–
IC = 150mA, IB = 15mA
–
IC = 500mA, IB = 50mA
–
VBE(sat)
IC = 150mA, IB = 15mA
–
–
––
––
– 300
––
––
––
––
– 300
––
––
––
– 0.2 V
– 0.5 V
– 0.15 V
– 0.5 V
– 1.1 V
– 0.9 V
Base–Emitter ON Voltage (NTE129 Only) VBE(on) IC = 500mA, VCE = 500mV
– – 1.1 V
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1%.
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