NTE2361 데이터 시트보기 (PDF) - NTE Electronics

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NTE2361

NTE2361 (NPN) & NTE2362 (PNP) Silicon Complementary Transistors

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = 25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Output Capacitance

Cob VCB = 10Vdc,

f = 1MHz

NTE2361 – 5.6 – pF

NTE2362 – 3.7 – pF

Collector–Emitter Saturation Voltage

VCE(sat) IC = 100mA,

IB = 10mA

NTE2361 – 0.15 0.4 V

NTE2362 – 0.1 0.3 V

Base–Emitter Saturation Voltage

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Breakdown Voltage

Rise Time

Storage Time

Fall Time

VBE(sat) IC = 100mA, IB = 10mA

– 0.8 1.2 V

V(BR)CBO IC = 10µA, IE = 0

60 – – V

V(BR)CEO IC = 100µA, RBE = ∞

50 – – V

V(BR)EBO IE = 10µA, IC = ∞

5––V

ton

VCC = 20V,

tstg

IC = 100mA,

IB1 = 10mA,

tf

IB2 = 100mA

– 70 – ns

– 400 – ns

NTE2361 – 50 – ns

NTE2362 – 70 – ns

Note 1. For PNP device (NTE2362), voltage and current values are negative.

Note 2. Conditions apply to both except where noted.

.165 (4.2)

Max

.126

(3.2)

Max

.071

(1.8)

.500

(12.7)

Max

ECB

.050 (1.27)

.050 (1.27)

.035 (0.9)

.102

(2.6)

Max

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