NTE90 데이터 시트보기 (PDF) - NTE Electronics
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NTE90 Datasheet PDF : 2 Pages
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NTE90 (NPN) & NTE91 (PNP)
Silicon Complementary Transistors
General Purpose High Gain Amplifier
Absolute Maximum Ratings: (TA = +25°C)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Base–Emitter Voltage
Collector–Emitter Saturation Voltage
Current Gain–Bandwidth Product
Collector Output Capacitance
V(BR)CEO IC = 1mA, RBE = ∞
V(BR)CBO IC = 10µA, IE = 0
ICBO VCB = 100V, IB = 0
hFE1 VCE = 12V, IC = 2mA
hFE2 VCE = 12V, IC = 10mA
VBE VCE = 12V, IC = 2mA
VCE(sat) IC = 10mA, IB = 1mA
fT
VCE = 12V, IC = 5mA
Cob VCB = 25V, IE = 0, f = 1MHz
Min Typ Max Unit
120 – – V
120 – – V
– – 0.5 µA
400 – 800
125 – –
– – 0.75 V
– – 0.2 V
– 350 – MHz
– 1.6 – pF
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