NTE2634 데이터 시트보기 (PDF) - NTE Electronics
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NTE2634 Datasheet PDF : 2 Pages
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NTE2633 (NPN) & NTE2634 (PNP)
Silicon Complementary Transistors
High Frequency Video Driver
Description:
The NTE2633 (NPN) and NTE2634 (PNP) are silicon complementary epitaxial transistor in a TO126
type package designed for use in the buffer stage of the driver for high–resolution color graphics moni-
tors.
Features:
D High Breakdown Voltage
D Low Output Capacitance
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95V
Collector–Emitter Voltage (RBE = 100Ω), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Total Power Dissipation (TS ≤ +115°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Thermal Resistance, Junction–to–Soldering Point (TS ≤ +115°C, Note 1), RthJS . . . . . . . . . 20K/W
Note 1. TS is the temperature at the soldering point of the collector lead.
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Base Breakdown Voltage V(BR)CBO IC = 0.1mA
115 – – V
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA
95 – – V
V(BR)CER IC = 10mA, RBE = 100Ω
110 – – V
Emitter–Base Breakdown Voltage V(BR)EBO IE = 0.1mA
3––V
Collector Cutoff Current
ICES IB = 0, VCE = 50V
– – 100 µA
ICBO IE = 0, VCB = 50V
– – 20 µA
DC Current Gain
hFE IC = 50mA, VCE = 10V, TA = +25°C
20 35 –
Transition Frequency
fT
IC = 50mA, VCE = 10V, f = 100MHz,
TA = +25°C
0.8 1.2 – GHz
Collector–Base Capacitance
Ccb IC = 0, VCB = 10V, f = 1MHz, TA = +25°C – 2.0 – pF
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