NTE20 데이터 시트보기 (PDF) - NTE Electronics

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NTE20

Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output

NTE Electronics 

NTE20 (NPN) & NTE21 (PNP)

Silicon Complementary Transistors

High Power, Low Collector Saturation Voltage

Power Output

Features:

D High Power in a Compact ATR Package: PO = 1W

Applications:

D Regulated Power Supplies

D 1 to 2W Output Stages

D Drivers

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A

Pulse

NTE20 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A

NTE21 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0A

Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W

Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +135°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +135°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector–Emitter Breakdown Voltage

Collector–Base Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector Cutoff Current

V(BR)CEO IC = 1mA

V(BR)CBO IC = 50µA

V(BR)EBO IE = 50µA

ICBO VCB = 20V

Emitter Cutoff Current

DC Current Gain

Collector Saturation Voltage

Transition Frequency

IEBO

hFE

VCE(sat)

fT

VEB = 4V

VCE = 3V, IC = 500mA

IC = 2A, IC = 200mA

VCE = 5V, IC = 500mA

Output Capacitance

Cob VCB = 10V, f = 1MHz

Min Typ Max Unit

32 –

–

V

40 –

–

V

5

–

–

V

–

–

1 µA

–

–

1 µA

120 – 270

– 500 – mV

– 100 – MHz

– 50 – pF

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