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NTE182

Silicon Complementary Transistors General Purpose Amplifier, Switch

NTE Electronics 

NTE182 (NPN) & NTE183 (PNP)

Silicon Complementary Transistors

General Purpose Amplifier, Switch

Description:

The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use

in general purpose amplifier and switching applications.

Features:

D DC Current Gain Specified to 10A

D High Current Gain–Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA

Absolute Maximum Ratings:

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V

Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A

Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A

Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.72W/°C

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.39°C/W

Electrical Characteristics: (TC =+25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

OFF Characteristics

Collector–Emitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0, Note 1

60

Collector Cutoff Current

ICEO VCE = 30V, IB = 0

–

ICEX VCE = 70V, VBE(off) = 1.5V

–

VCE = 70V, VBE(off) = 1.5V,

–

TC = +150°C

ICBO VCB = 70V, IE = 0

–

VCB = 70V, IE = 0, TC = +150°C –

Emitter Cutoff Current

IEBO VBE = 5V, IC = 0

–

––V

– 700 µA

– 1.0 mA

– 5.0 mA

– 1.0 mA

– 10 mA

– 5.0 mA

Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.

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