NTE5500 데이터 시트보기 (PDF) - NTE Electronics

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NTE5500

Silicon controlled rectifier (SCR), 16 Amp

NTE Electronics 

Absolute Maximum Ratings (Cont’d): (TJ = +125°C unless otherwise specified)

Peak Gate Power – Forward, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W

Average Gate Power – Forward, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW

Peak Gate Current – Forward, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A

Peak Gate Voltage – Forward, VGFM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V

Peak Gate Voltage – Reverse, VGRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Stud Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 in. lb. (3.33 mN)

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Peak Forward or Reverse Blocking Current IDRM, IRRM TJ = +125°C

NTE5500 thru NTE5506

NTE5507

NTE5508

NTE5509

Gate Trigge Current (Continuous DC)

Gate Trigger Voltage (Continuous DC)

Holding Current

Forward ON Voltage

Turn–On Time

Turn–Off Time

Forward Voltage Application Rate

Thermal Resistance, Junction to Case

IGT

VGT

IHOLD

VTM

tgt

tq

dv/dt

RΘJC

Anode Voltage = 7V, RL = 50Ω

Anode Voltage = 7V, RL = 50Ω

Anode Voltage = 7V, Gate Open

IT = 20A

IT = 10A, IG = 100mA

TJ = +125°C, IT = 10A, IR = 10A,

dv/dt = 30V/µs Min,

VDRM = Rated Voltage

TJ = +125°C, Gate Open

Min Typ Max Unit

– – 10 mA

– – 8 mA

– – 6 mA

– – 4 mA

– 10 25 mA

0.25 – 3.0 V

– 20 – mA

– 1.1 1.5 V

– 1.0 – µs

– 30 – µs

– 30 – V/µs

– 1.0 2.0 °C/W

.562

(14.28)

Max

Gate

Cathode

1.193

(30.33)

Max

.453

(11.5)

Max

.200 (5.08) Max

Anode

1/4–28 UNF–2A

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