NTE5401 데이터 시트보기 (PDF) - NTE Electronics

부품명

상세내역

제조사

NTE5401

Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate

NTE Electronics 

Electrical Characteristics:

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Peak Off–State Current

IRRM VRRM = Max, VDRXM = Max,

–

IDRXM TC = +100°C, RG–K = 1kΩ

–

Maximum On–State Voltage VTM TC = +25°C, IT = 1.2A (Peak)

–

DC Holding Current

IHOLD TC = +25°C

–

DC Gate–Trigger Current

IGT VD = 6VDC, RL = 100Ω, TC = +25°C –

DC Gate–Trigger Voltage

VGT VD = 6VDC, RL = 100Ω, TC = +25°C –

I2t for Fusing Reference

I2t > 1.5msoc

–

– 50 µA

– 50 µA

– 1.7 V

– 5 mA

50 200 µA

– 0.8 V

– 0.15 A2sec

Critical Rate of Applied

Forward Voltage

dv/dt TC = +100°C

(critical)

– 5 – V/µs

.210

(5.33)

Max

.135 (3.45) Min

Seating

Plane

.500

(12.7)

Min

.021 (.445) Dia Max

.100 (2.54)

KG A

.050 (1.27)

.105 (2.67) Max

.205 (5.2) Max

.165 (4.2) Max

.105 (2.67) Max

Share Link: