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MJE802(2003) 데이터 시트보기 (PDF) - STMicroelectronics
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MJE802
(Rev.:2003)
SILICON NPN POWER DARLINGTON TRANSISTOR
STMicroelectronics
MJE802 Datasheet PDF : 4 Pages
1
2
3
4
MJE802
THERMAL DATA
R
thj-amb
Thermal Resistance Junction-ambient
Max
3.13
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= rated V
CBO
V
CB
= rated V
CBO
T
case =
100
o
C
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= rated V
CEO
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
Collector-Emitter
V
CEO(sus)
∗
Sustaining Voltage
(I
B
= 0)
I
C
= 50 mA
V
CE(sat)
∗
Collector-Emitter
Saturation Voltage
I
C
= 4 A
I
C
= 1.5 A
V
BE
∗
Base-Emitter Voltage
I
C
= 4 A
I
C
= 1.5 A
h
FE
∗
DC Current Gain
I
C
= 4 A
I
C
= 1.5 A
h
fe
Small Signal Current
Gain
I
C
= 1.5 A
f = 1 MHz
* Pulsed: Pulse duration = 300
µ
s, duty cycle
≤
1.5%
I
B
= 40 mA
I
B
= 30 mA
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
Min. Typ.
80
100
750
1
Max.
100
500
100
2
3
2.5
3
2.5
Unit
µ
A
µ
A
µ
A
mA
V
V
V
V
V
Safe Operating Area
2/4
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