NTE2637 데이터 시트보기 (PDF) - NTE Electronics

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NTE2637

Silicon NPN Transistor CRT Horizontal Deflection, High Voltage, Fast Switching

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA

700 –

–

V

Emitter–Base Voltage

VEBO IE = 10mA, IC = 0

10 –

–

V

Collector–Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 1.25A, Note 1

–

– 1.5 V

Base–Emitter Saturation Voltage

VBE(sat) IC = 5A, IB = 1.25A, Note 1

–

– 1.3 V

DC Current Gain

hFE IC = 5A, VCE = 5V,

6

–

–

Note 1

TJ = +100°C 4

–

–

Resistive Load

Storage Time

Fall Time

Resistive Load

ts

VCC = 400V, IC = 5A, IB1 = 1.25A,

– 2.7 3.9 µs

tf

IB2 = 2.5A

– 190 280 ns

Storage Time

Fall Time

Storage Time

Fall Time

ts

IC = 5A, f = 15625Hz, IB1 = 1.25A,

–

2.3

–

µs

tf

IB2 = 2.5A,

Vceflyback = 1050 sin(π/10 106)t V

– 350 – ns

ts

IC = 5A, f = 31250Hz, IB1 = 1.25A,

–

2.3

–

µs

tf

IB2 = 2.5A,

Vceflyback = 1200 sin(π/10 106)t V

– 200 – ns

Note 1. Pulsed: Pulse Duration = 300µs, Duty Cycle = 1.5%.

.140 (3.55)

.222 (5.65) Max

.354

(9.0)

.199

(5.05)

.638 (16.2) Max

Isol

1.673

(42.5)

Max

.835

(21.2)

Max

.817

(20.75)

Max

BC E

.091

(2.3)

Max

.433 (11.0)

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